any changing of specification will not be informed individual 2SA1036 pnp silicon general purpose transistor collector 3 1 base 2 emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente 1 2 3 fe a tures . large i c , i c max .=-500ma . low v ce(sat) , ideal for low-voltage operation . small package. ( maximum r a tings* t a =25 ) sy mbol parameter v a lue unit s v cbo collector-base v ol t age - 4 0 v v c e o collector-emitter v o l t age - 32 v v eb o emitter-base v o lt age -5 v i c collector current -continuous -500 ma p d t o t a l device dissi p a tion 150 mw t j , t st g junction and s t orage t e mperature -55 ~ 125 *these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. electrical characteristics( t amb=2 5 unless other w ise specified) p a r a m e t e r sy mbol t e st conditions min t yp max unit c o llect o r - b ase b r eak do w n v o l t a g e v ( b r)c b o ic = - 100u a, i e = 0 - 4 0 v c o llect o r -emitter b r eak do w n v o l t a g e v ( b r)c e o ic=-1ma,i b = 0 - 32 v emitter-b ase b r eakd o w n v o lt ag e v ( br ) ebo i e = - 100 u a,i c =0 -5 v c o llect o r c u t- o ff c u rre n t i c b o v c b = - 2 0 v , i e =0 - 1 u a emitter cut-off current i ebo v eb =- 4 v ,i c =0 - 1 u a dc c u rr e nt g a in h fe v c e =- 3 v ,i c = - 10 ma 82 39 0 co llecto r -emitter satu r atio n v o lt ag e v ce (sa t ) i c = - 100ma, i b =-10ma -0. 4 v t r a n s ition fr e qu e n c y f t v c e = - 5 v , i c = - 20 ma ,f=100mhz 20 0 mhz co llecto r o u t p u t cap acit a n ce c ob v c b = - 10 v , i e = 0 ,f = 1mhz 7 pf classifica tion of h fe rank p q r r a nge 82 -1 8 0 120-2 7 0 180 - 390 m a r k i n g h p h q h r . r o h s c o m p l i a n t p r o d u c t 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual 2SA1036 pnp silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente 01 -jun-2002 rev. a page 2 of 2
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